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| 1N4386 SILICON MULTIPLIER VARACTOR DIODE PACKAGE STYLE DO- 4 DESCRIPTION: The 1N4396 is a High Power Silicon Multiplier Varactor Diode. MAXIMUM RATINGS IF VR PDISS TJ TSTG JC O O 200 mA 250 V 20 W @ TC = 25 C -65 C to +150 C -65 C to +175 C 5.0 C/W O O O O 1 = Anode 2 = Cathode CHARACTERISTICS SYMBOL VBR CT RS POUT(X3) IR = 10 A VR = 6.0 V VR = 6.0 V PIN = 30 W TC = 25 C O TEST CONDITIONS f = 1.0 MHz f = 50 MHz FIN = 150 MHz MINIMUM 250 20 TYPICAL MAXIMUM 50 UNITS V pF Ohms W 0.7 15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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